We’re pleased to introduce five additions to our Automotive-grade lineup designed to deliver in the most demanding applications. 

Ranging from 40V to 100V, these N-channel and P-channel power MOSFETs are AEC-Q101 qualified, PPAP capable, and proven to perform. Leveraging two innovative MOSFET technologies — trench and split-gate trench — our new products provide flexibility and a host of advantages.

Our new trench power low-voltage (LV) MOSFETs, MCG30N04HE3-TP and MCG35N04HE3-TP, provide low on-resistance and precise field distribution. The larger gate surface also ensures superior power handling and optimized switching performance, making these products ideal for Auto systems from EPS to lighting and more.  

And our split-gate trench (SGT) MOSFETs, MCG40N10YHE3-TP, MCAC80P06YHE3-TP, and MCG15P10YHE3-TP, provide low on-resistance, enhanced control over the electric field distribution, and exceptional performance in high-switching applications. The SGT design performs well for high-voltage devices, including Auto power supplies, DC-DC converters, other crucial auto functions, and Industrial uses. 

Available in DFN3333 and DFN5060 packages, these products offer superior heat dissipation with the option for a compact design to save space and reduce overall BOM costs.  

No matter which of these AEC-Q101 qualified MOSFETs you choose, you’ll leverage the efficiency and reliability to meet the most demanding Automotive environments.