Low RDS(on) of 13mΩ couples with 45A High Current Capability for Next‑Generation Power Designs in DFN3333-8(SWF)
Micro Commercial Components (MCC) introduces the MCGWF45P04-TP, a high-performance 40V P-Channel MOSFET designed to meet the growing demand for efficient high-side switching in compact power systems. As modern electronic designs continue to shrink while requiring higher current capability, designers face increasing challenges in managing conduction losses, thermal performance, and board space.
The MCGWF45P04-TP addresses these challenges by combining a low RDS(on) of 13mΩ with a continuous drain current capability of up to 45A at 25°C in a compact DFN3333-8(SWF) package. Built on Trench Power LV MOSFET technology, the device minimizes switching losses while maintaining strong thermal performance. Its side-wettable flank (SWF) design further improves assembly quality and inspection reliability, enabling efficient and scalable manufacturing for high-density applications.
40V P-Channel MOSFET
Features & Benefits:
- Low RDS(on): 13mΩ (max) at VGS = 10V minimizes conduction losses and improves efficiency
- Trench Power LV MOSFET Technology: Enables reduced switching losses and enhanced performance in high‑side switching designs
- High Current Capability: Supports continuous drain current of 45A at 25°C for demanding power applications
- Compact Package: DFN3333-8(SWF) footprint allows higher power density and space optimization
- Low Thermal Resistance: 3°C/W junction‑to‑case enables efficient heat dissipation and stable operation
- Side-Wettable Flanks (SWF): Improves automated optical inspection (AOI) and manufacturing reliability
- 40V VDS Rating: Suitable for low-to-mid voltage power systems and switching applications
Product Highlights
40V P‑Channel MOSFET
1
Simplified High-Side Switching
The P-channel architecture reduces gate drive complexity, enabling simpler and more efficient high-side switching designs
40V P‑Channel MOSFET
2
Low Conduction Loss for High Efficiency
With RDS(on) as low as 13mΩ, the device minimizes conduction losses, improving energy efficiency in power distribution and switching systems
40V P‑Channel MOSFET
3
Compact High Power Density Design
The DFN3333-8(SWF) package enables high current capability in a small footprint, ideal for space-constrained applications. The SWF package is designed to improve AOI by providing clear solder joint visibility after reflow soldering. This enables more reliable solder joint inspection, enhances manufacturability, reduces inspection uncertainty, and improves long-term assembly reliability
40V P‑Channel MOSFET
4
Reliable Thermal Performance
Low junction‑to‑case thermal resistance (3°C/W) enables efficient heat dissipation, ensuring stable operation under high current conditions
Applications
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Data Center and Networking Infrastructure
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Energy & Power Management
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Industrial Systems
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Power Conversion
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Consumer Electronics
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Motor Control
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Channel |
Drain-Source |
Gate-Source |
Drain-Source |
Datasheet |
|
P |
40 |
±20 |
0.013 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.








