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Low RDS(on) Drives Efficiency in a Compact DFN5x6 Package
Introducing MCC’s newest addition to our advanced P-channel MOSFET lineup — MCAC017P08Y. This 80V component is engineered with SGT technology to deliver maximum efficiency in the compact DFN5060 package.
Boasting an on-resistance of only 17mΩ, gate charge of 17nC, and low conduction losses, this MOSFET ensures the performance and reliability required for fast switching with minimal power consumption.
Perfect for high-switching applications, including motor drives, DC-DC converters, and power drive modules, MCAC017P08Y enables innovation in space-constrained environments while enhancing system performance.
Features & Benefits:
- SGT Technology: Improves efficiency while reducing power loss
- Low On-Resistance: An RDS(on) of 17mΩ reduces switching losses, boosting efficiency
- Low Conduction Losses: Minimize heat generation for optimal performance
- Low Gate Charge: A gate charge of 17nC promotes faster switching
- Low Switching Losses: Enable rapid switching for high-frequency applications
- High Power Density: DFN5x6 package saves space without lowering performance
- Excellent Thermal Performance: Facilitates safe operation by preventing overheating
Applications
Advanced features and robust performance are just a few of the reasons why MCAC017P08Y is an optimal choice for a range of applications and industries, including:
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Industrial |
Consumer |
Telecommunications |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source Voltage |
Drain-Source On- |
Mounting Type |
Datasheet |
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P-Channel MOSFET |
DFN5060 |
-80V |
17mΩ |
Surface-Mount (SMD) |
Contact us to request a sample or ask a question.
Explore our essential MOSFET guide for tips on choosing the right component for the job.
