MCC introduces the MIUZ100R12GJTL-BP, a high-performance 1200V, 100A IGBT module purpose-built for applications requiring both high voltage and high current handling. Its low V_CE(sat) of 2.2V at 150°C ensures minimal conduction loss, while the advanced device structure keeps switching losses low for efficient operation even under heavy loads.  

The robust, SOT-227 compatible GJ package features an isolated copper baseplate with Direct Bonded Copper (DBC) technology, providing excellent thermal management and isolation. With a junction-to-case thermal resistance of just 0.2 K/W and support for operating junction temperatures up to 175°C, this module is ideal for systems where efficiency, compactness, and long-term reliability are critical. 

Beyond its electrical advantages, the MIUZ100R12GJTL-BP is optimized for seamless system integration and operational stability. Low inductance reduces voltage overshoot during switching, while the construction ensures effective heat dissipation for consistent performance in space-constrained or high-temperature environments. The positive temperature coefficient of V_CE(sat) simplifies parallel operation, further enhancing reliability in demanding industrial, power conversion, and renewable energy applications.