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Automotive Grade High-efficiency Power MOSFET with low conduction losses, low-on resistance built on Trench Power MV MOSFET Technology
MCC introduces the 100V P-channel MCT06P10HE3 MOSFET in a SOT-223 package. Featuring Trench Power MV technology with an RDS(on) of 210mΩ, it delivers lower gate charge and superior switching performance for power management. The thermally optimized package supports operation ≤150°C, while the standard footprint enables easy integration. Ideal for high-frequency switching and compact power systems, it reduces losses and enhances thermal performance.
Features & Benefits:
- AEC-Q101 Qualified
- Trench Power MV MOSFET Technology
- Low gate charge for fast switching
- Reliable operation up to 150°C junction temperature
- SOT-223 package for effective heat dissipation
- Industry-standard footprint
Applications
The MCT06P10HE3 is engineered for use in a broad range of power and control applications across multiple industries. Its robust performance and compact design make it an excellent choice for demanding environments where efficiency and reliability are critical.
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Power Management n |
Industrial |
Computing & Server |
Automotive |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source Voltage VDS |
Drain-Source On-Resistance RDS(on) |
Mounting Type |
Datasheet |
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Power MOSFETs |
SOT-223 |
-100V |
0.21 Ω |
Surface Mount |
For technical inquiries or sample requests, contact MCC for support.
