Split Gate Technology MOSFET's

Micro Commercial Components presents a new series of Low Voltage MOSFET's using Split-Gate-Technology, which offers extremely low R_DSON value for higher current density in smaller packages to be used for space saving and high efficiency requirements applications. First released are in DFN5060 and D²PAk package, and provide voltage range 40...150V with R_ds(ON) values 4,3Ω (100V@V_GS=10V) down to 1,8mΩ (40V@V_GS=10V).

 

Features: Wide range of LV MOSFET portfolio Low RSP value (specific on-state resistance) High efficiency, improved FOM Increases BVDSS Decreases Qgd (reduces Miller charge coupling)

Applications:

• UPS
• Charges
• Motor drives for power tools
• LED lighting-applications
• High power low side applications

Key Parameters:

Part Number	Package	Drain-Source Voltage VDS(V)	Drain Current ID(A)	RDS(ON)Max @VGS=10V (Ω)
MCAC10H04Y	DFN5060	40	100	0.0018
MCAC10H045Y	DFN5060	45	100	0.0018
MCAC802045Y	DFN5060	45	80	0.0019
MCB150N06YB	D2-PAL	60	150	0.0055
MCAC85N06Y	D2-PAL	60	85	0.013
MCAC30N06Y	DFN5060	60	30	0.02
MCAC50N06Y	DFN5060	60	50	0.0082
MCAC53N06Y	DFN5060	60	53	0.0082
MCAC70N06Y	DFN5060	60	70	0.007
MCAC80N06Y	DFN5060	60	80	0.0042