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Ultra-Compact 1x1mm DFN Package with ESD Protection & 250mΩ RDS(on)
MCC Semi is proud to announce our latest component with serious benefits: SI3134KU6. This 20V dual N-channel MOSFET was meticulously designed for high-speed switching.
Its ultra-compact DFN1010 package only takes up 1x1mm of space while delivering a low input gate charge and ESD-protected gate input up to 2kV.
When component density counts, our new 20V MOSFET is the product for the job — whether it’s a computing, industrial, telecom, or consumer application.
The newest star in our lineup leverages trench LV MOSFET technology and MCC reliability to offer engineers the ideal component for motherboards, charging circuits, automation controls, and more.
Features & Benefits:
- Trench low voltage (LV) MOSFET technology
- Dual N-channel MOSFET with single function
- Compact 1mm x 1mm size
- DFN1010 package
- ESD protected up to 2kV
- Low gate charge
- 250mΩ RDS(on)
- Ideal for high-speed switching
Applications
A solution with built-in ESD protection, MCC’s 20V dual-channel MOSFET offers the versatility and performance to suit diverse high-switching applications, including:
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Consumer |
Computing |
Industrial |
Telecommunications |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain-Source Voltage (VDS) |
Drain-Source On-Resistance (RDSON) |
Mounting Type |
Datasheet |
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Small Signal MOSFET |
DFN1010B-6 |
20V |
250mΩ |
Surface-mount (SMD) |
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