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Low RDS(on) Meets Reduced Gate Charge in Popular DPAK Package
Meet high-voltage design challenges head-on with MCC’s latest (and greatest) MOSFET, the 950V MCU1K4N95SH. While traditional MOSFETs often include energy losses and slower switching, our new superjunction (SJ) MOSFET features a low gate-to-drain charge, significantly reducing conduction losses and amplifying overall efficiency.
Its superjunction MOSFET technology and on-resistance of only 1.49Ω empower engineers to design for higher voltage ratings without compromising performance. A DPAK (TO-252) package only adds to our MOSFET’s versatility, making it ideal for AC-DC power supplies, LED lighting, charging adapters, solar and energy devices, and other high-voltage applications across multiple industries.
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Features & Benefits:
- Superjunction (SJ) MOSFET technology enhances efficiency
- High-voltage rating of 950V is well-suited for demanding applications
- Low gate charge enables faster switching speeds
- High-speed switching capabilities improve overall performance
Applications:
Our advanced high-voltage MOSFET features switching speeds and efficiency to boost performance in a range of consumer and industrial applications.
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| Power Supplies | Metering | Renewable Energy |
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Product Attributes, Parametrics & Datasheet
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Product |
Type | Package | Drain- Source Voltage VDS | Max. Drain-Source On-Resistance RDS(on) |
Mounting Type |
Datasheet |
| MCU1K4N95SH | N-channel Superjunction Power MOSFET | DPAK (TO-252) | 950V | 1.49Ω | Surface-Mount (SMD) | Info |
Contact MCC to quickly request a sample or ask a question.
