These 1200V Gen4 SiC Schottky diodes are well suited for high-voltage, high-efficiency power applications requiring low switching loss, high thermal stability, and long-term reliability.
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Electric Vehicle & Charging Infrastructure |
Motor Control & Motion Systems |
Power Conversion & Power Management |
Renewable Energy |
Industrial Power Systems s |
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The Gen4 1200V SiC Schottky series is built on advanced Junction Barrier Schottky (JBS) architecture, combining fast majority-carrier conduction with improved electric field control and leakage suppression. Unlike conventional silicon rectifiers, SiC Schottky devices eliminate minority carrier storage effects, resulting in negligible reverse recovery charge and significantly reduced switching losses.
Gen4 technology further enhances high-temperature stability and surge robustness, supporting operation from −55 °C to +175 °C with ultra-low leakage current and a positive temperature coefficient of forward voltage. This enables higher efficiency, improved thermal margins, and greater reliability in automotive, industrial, and renewable energy systems.
To better understand how SBD, JBS, and MPS SiC structures differ and how to select the right architecture for your application, click here to explore our in-depth technical guide: Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)
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Product |
Type |
Package |
Average |
Peak Repetitive |
Forward |
At Rated Forward |
Reverse Voltage |
Datasheet |
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10 |
1200 |
1.55 |
10 |
20 |
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| DPAK |
2 |
1200 |
1.6 |
2 |
20 |
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10 |
1200 |
1.55 |
10 |
25 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.