The Gen5 SiC Schottky Diode Series is well suited for a wide range of high‑power and high‑efficiency applications where low losses, fast switching, and thermal stability are critical. Its combination of high current capability, 650 V blocking performance, and robust Gen5 SiC MPS technology supports reliable operation across industrial, energy, power infrastructure, and automotive systems, with an AEC‑Q101 qualified option available for demanding vehicle environments.
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Power Conversion & Power Management |
Industrial & Automation |
Renewable Energy & Energy Infrastructure |
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High-Current Power Distribution |
Charging Infrastructure |
Automotive (AEC-Q101 Option) |
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Selecting the right Silicon Carbide (SiC) diode requires more than simply matching voltage and current ratings. Device architecture, switching behavior, surge performance, and thermal headroom all play critical roles in ensuring long-term system reliability.
The Gen5 650 V series is built on an advanced Merged PiN Schottky (MPS) structure that combines the low switching losses of a Schottky diode with significantly improved surge robustness and reliability. Compared to earlier SiC generations, Gen5 technology delivers:
For engineers comparing SiC generations or evaluating MPS, JBS, and conventional Schottky structures, MCC offers a comprehensive technical guide detailing structural differences, performance trade-offs, and key design considerations.
Learn more about selecting the right SiC Schottky diode for your application: Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)
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Product |
Type |
Package |
Average |
AEC-Q101 |
Peak Repetitive |
Forward |
At Rated Forward |
Reverse Voltage |
Datasheet |
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20 |
Yes |
650 |
1.3 |
20 |
25 |
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20 |
No |
650 |
1.3 |
20 |
25 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.