MCC Introduces Gen4 SiC Schottky Diodes for High-Voltage Efficiency

Written by MCC | Feb 19, 2026 8:50:02 PM

Applications

The Gen4 SiC Schottky Diode Series is well suited for a wide range of high-voltage and high-efficiency power conversion designs. Its fast-switching performance, low losses, and robust thermal behavior make it an ideal choice across multiple power electronics verticals.


Switching Power Supplies (SMPS)	Power Factor Correction (PFC)	Solar Inverters	Industrial Power Systems	High-Efficiency Rectifiers
Server and data center power supplies Telecom and networking power units AC/DC and DC/DC converter stages High-frequency, high-density power modules	Boost PFC stages for industrial and commercial power supplies Front-end PFC for server and telecom systems High-power AC input conditioning circuits	String inverters Central inverters DC/DC conversion stages in photovoltaic systems Auxiliary power supplies for inverter control electronic	Motor drives and variable frequency drives (VFDs) Welding equipment and plasma power supplies Industrial UPS systems Automation and factory power infrastructure	AC/DC rectification stages High-voltage DC power supplies Battery charging systems Renewable energy and energy storage front ends

Understanding SiC Schottky Structures

SiC Schottky diodes are available in multiple structural architectures optimized for different performance trade-offs, including SBD (Schottky Barrier Diode), JBS (Junction Barrier Schottky), and MPS (Merged PiN Schottky). Each structure balances efficiency, leakage control, and surge robustness differently depending on the application requirements.

To compare these architectures in detail and determine which structure best matches your operating conditions, explore our in-depth technical guide: Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)

Product Attributes, Parametrics & Datasheet

Product	Type	Package	Average Forward Current I_F(AV)(A)	Peak Repetitive Reverse Voltage V_RRM (V)	Forward Voltage V_F (V) [max]@I_F(A)	At Rated Forward Current I_F (A)	Reverse Voltage Leakage Current I_R (uA) [max] @ V_R	Datasheet
SICU0465XG4J	SiC Schottky Barrier Diodes (SBDs)	DPAK	4	650	1.65	4	20	Info
SICB10120G4J	SiC Schottky Barrier Diodes (SBDs)	D2-PAK	10	1200	1.6	10	25	Info
SIC3065G4J	SiC Schottky Barrier Diodes (SBDs)	TO-220AC	30	650	1.6	30	25	Info

Now available, purchase directly from MCC or through our authorized distributors. 

For technical inquiries or sample requests, contact MCC for support. 

View full post