MCC Introduces 650V–1200V Gen4 SiC Schottky Barrier Rectifiers

Applications 

The SICW Series Gen4 SiC Schottky Barrier Rectifiers are well suited for a wide range of high‑voltage, high‑frequency power conversion applications. Their zero reverse recovery behavior, low conduction losses, and high‑temperature capability enable efficient, reliable operation across multiple industry verticals. 

Understanding Gen4 SiC Technology  

The SICW Series is built on MCC’s Gen4 Junction Barrier Schottky (JBS) Silicon Carbide technology, designed to improve efficiency, switching performance, and thermal reliability in high-voltage power conversion systems.

Compared with conventional silicon rectifiers, SiC Schottky devices operate with virtually zero reverse recovery current, eliminating a major source of switching losses in high-frequency power circuits. This allows designers to increase switching frequency, reduce heat generation, and improve overall system efficiency.

MCC’s Gen4 SiC platform further optimizes the JBS structure, balancing low forward voltage with strong blocking capability and stable leakage characteristics at elevated temperatures. The result is improved efficiency under real operating conditions and greater reliability in demanding power environments.

These material and device improvements make Gen4 SiC rectifiers particularly well suited for modern power architectures such as PFC stages, high-frequency SMPS, EV charging systems, renewable energy converters, and industrial motor drives, where efficiency and thermal performance are critical.

To learn more about SiC diode structures, performance characteristics, and how to select the right device for your design, read the full guide: Choosing the Right SiC Schottky Diode

Product Attributes, Parametrics & Datasheet

Now available, purchase directly from MCC or through our authorized distributors. 

For technical inquiries or sample requests, contact MCC for support.