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Industrial Power Supplies |
Power Quality and Energy Conditioning |
Motion Control and Transportation |
Charging Infrastructure and Energy Delivery |
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The SICWT40120G6M is built on Merged PiN Schottky (MPS) technology, a structural evolution of standard SiC Schottky designs that combines majority-carrier switching behavior with enhanced surge robustness. Under normal operation, current flows through the Schottky region for fast switching and low loss. During high-current or surge events, the embedded PiN regions activate to support higher current handling and improved thermal stability. This structure is particularly well suited for high-power rectification stages where both efficiency and surge capability are critical.
SiC Schottky devices are available in multiple structural variants, including SBD, JBS, and MPS, each optimized for different trade-offs between leakage control, switching performance, and surge robustness. To understand how these structures differ and how to select the right architecture for your operating conditions, explore our in-depth technical guide: Choosing the Right SiC Schottky Diode (SBD vs JBS vs MPS)
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Product |
Type |
Package |
Average |
Peak Repetitive |
Forward |
At Rated Forward |
Reverse Voltage |
Datasheet |
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40 |
1200 |
1.65 |
40 |
25 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.