From high switching speed to low on-resistance and high blocking voltage, MCC’s Silicon Carbide MOSFETs provide superior characteristics for a range of high-voltage and high-power applications.
Industrial | Renewable | Communication |
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MCC’s SiC MOSFETs offer effective, dependable, and high-quality solutions for a broad spectrum of industrial, commercial, and scientific uses.
Product |
Drain-Source Voltage VDS |
Gate-Source Voltage VGSmax |
Continuous Drain Current ID |
RDS(ON)
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VGS(th)
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Package Type |
Info/Data Sheets |
SICW080N120Y4-BP | 1200V | -8/+22 | 38A | 85mΩ | 3.6V | TO-247-4 | Info |
SICW1000N170A-BP | 1700V | -5/+25 | 3A | 1370mΩ | 4.5V | TO-247AB | Info |
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