72 mΩ maximum RDS(on), 24A current capability, and low thermal resistance
MCC announces the MDTK072N60H, a 600V N-Channel Power MOSFET designed to address the challenges of high-voltage power conversion in space-constrained industrial and infrastructure applications. Built with Super Junction technology and packaged in a compact TOLL-8L-KS surface-mount footprint, the device combines robust current handling with effective thermal management for demanding power stages.
The MDTK072N60H features a maximum on-resistance of 72 mΩ, supporting reduced conduction losses in high-voltage switching circuits. With continuous drain current capability of 24A and junction-to-case thermal resistance of 1.1°C/W, the device delivers reliable performance across AC/DC power supplies, server power systems, industrial power conversion, and renewable energy applications.
60V N-Channel Power MOSFET
Features & Benefits:
- 600V N-Channel Power MOSFET supports high-voltage switching and power-conversion designs
- Maximum RDS(on) of 72 mΩ supports reduced conduction loss
- High continuous drain current up to 24A supports high-power applications
- Advanced Super Junction MOSFET technology minimizes conduction and switching losses while improving efficiency in high-voltage power conversion
- The TOLL-8L-KS package provides effective thermal performance in a compact surface-mount footprint
- Total gate charge of 70 nC supports switching-performance optimization
- Halogen-free, RoHS-compliant, and Moisture Sensitivity Level 1 construction supports environmentally responsible designs
Product Highlights
600V N-Channel Power MOSFET
1
Reduced Conduction Losses
The MDTK072N60H features a maximum RDS(on) of 72 mΩ. This low resistance supports improved power-conversion efficiency in high-voltage switching applications. Combined with Super Junction technology, the device balances conduction and dynamic performance for demanding industrial and consumer power designs.
60V N-Channel Power MOSFET
2
High Current Capability
The device supports continuous drain current up to 24A (Tc=25°C), with a secondary rating of 15A (Tc=100°C). Pulsed current (IDM) capability reaches 96A.
60V N-Channel Power MOSFET
3
Compact High-Density Design
The TOLL-8L-KS package provides a compact surface-mount footprint while delivering effective thermal and electrical performance for high-voltage applications. Package dimensions support high component density on power circuit boards, making the device suitable for space-constrained applications.
60V N-Channel Power MOSFET
4
Thermal Performance
With a maximum junction-to-case thermal resistance of 1.1°C/W and power dissipation rating of 113W, the MDTK072N60H supports effective thermal management in demanding high-power applications.
Applications
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Power Conversion
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Renewable Energy
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Data Center and Telecom
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Industrial Infrastructure
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Continuous Drain Current ID(A) | Drain-Source On-Resistance RDS(ON) Max @VGS=10V (mΩ) |
Total Gate Charge Qg (nC) | Datasheet |
| MDTK072N60H | TOLL-8L-KS | N-Channel |
600 |
±30 |
24 |
72 |
70 |
Now available, purchase directly from MCC or through our authorized distributors.
For technical inquiries or sample requests, contact MCC for support.



