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Optimal Thermal Performance with Low RDS(on) in a TO-220 Package
MCC Semi is unleashing the ultimate component for high-power switching — our 100V N-Channel MOSFET, MCP2D6N10Y. Leveraging advanced split-gate-trench (SGT) technology and low on-resistance of 2.6mΩ, this MOSFET is made to slash conduction losses while enhancing thermal efficiency.
Demanding power electronics get an extra boost of efficiency from its ultra-low junction-to-case thermal resistance of 0.6K/W. The TO-220 package only enhances its performance thanks to its high surge capability.
An ideal combination of robust current handling, superior heat dissipation, and optimal efficiency ensures this N-channel MOSFET delivers unwavering operation in high-power applications ranging from battery management systems and motor drives to DC-DC converters.
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Features & Benefits:
- High-performance 100V N-channel MOSFET
- Utilizes SGT technology
- Low on-resistance of 2.6mΩ
- Impressive junction-to-case thermal resistance of 0.6K/W
- Maximizes thermal efficiency and minimizes power losses
- Excellent thermal capabilities
- Robust current handling capacity
- Designed for TO-220 package with high surge capability
Applications
Our robust new 100V N-Channel Power MOSFET is engineered to provide assured excellence in a range of demanding industrial devices and systems, including:
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Industrial |
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Product Attributes, Parametrics & Datasheet
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Product |
Type |
Package |
Drain- Source Voltage |
Drain-Source On-Resistance |
Mounting Type |
Datasheet |
|
N-Channel MOSFET |
TO-220AB(H) |
100V |
2.6mΩ |
Through-hole |
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